Technical parameters/forward voltage: 1.1V @60A
Technical parameters/forward current: 60 A
Technical parameters/forward voltage (Max): 1.1V @60A
Encapsulation parameters/installation method: Chassis
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-5
External dimensions/packaging: DO-5
Physical parameters/operating temperature: 150 ℃
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Customs information/ECCN code: EAR99
Customs information/HTS code: 8541100080
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N1188AR
|
GeneSiC Semiconductor | 功能相似 | DO-5 |
整流器 400V 40A REV Leads Std. Recovery
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||
|
|
Infineon | 功能相似 | 2 |
Diode Switching 400V 35A 2Pin DO-5
|
||
|
|
International Rectifier | 功能相似 | DO-5 |
Diode Switching 400V 35A 2Pin DO-5
|
||
1N1188R
|
GeneSiC Semiconductor | 功能相似 | DO-5 |
Diode Switching 400V 35A 2Pin DO-5
|
||
|
|
VISHAY | 功能相似 | DO-203AB |
Diode Switching 400V 60A 2Pin DO-5
|
||
1N2135A
|
Vishay Semiconductor | 功能相似 | DO-203AB |
Diode Switching 400V 60A 2Pin DO-5
|
||
1N2135A
|
GeneSiC Semiconductor | 功能相似 | DO-5 |
Diode Switching 400V 60A 2Pin DO-5
|
||
JAN1N1188R
|
Microsemi | 功能相似 | DO-5 |
军事硅电力整流器 Military Silicon Power Rectifier
|
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