Technical parameters/rise/fall time: 40ns, 10ns
Technical parameters/number of channels: 1
Technical parameters/forward voltage: 1.4 V
Technical parameters/dissipated power: 100 mW
Technical parameters/rise time: 0.04 µs
Technical parameters/isolation voltage: 5000 Vrms
Technical parameters/forward current: 50 mA
Technical parameters/forward voltage (Max): 1.8 V
Technical parameters/forward current (Max): 50 mA
Technical parameters/descent time: 0.01 µs
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 100 mW
Technical parameters/power supply voltage: 7 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SMD-8
External dimensions/packaging: SMD-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
6N137
|
HP | 完全替代 |
EVERLIGHT 6N137 光电耦合器, 高速, DIP-8
|
|||
|
|
TI | 完全替代 | DIP |
EVERLIGHT 6N137 光电耦合器, 高速, DIP-8
|
||
6N137
|
Toshiba | 完全替代 | DIP-8 |
EVERLIGHT 6N137 光电耦合器, 高速, DIP-8
|
||
6N137
|
QT Brightek | 完全替代 | DIP-8 |
EVERLIGHT 6N137 光电耦合器, 高速, DIP-8
|
||
6N137
|
Broadcom | 完全替代 | DIP-8 |
EVERLIGHT 6N137 光电耦合器, 高速, DIP-8
|
||
6N137
|
Vishay Semiconductor | 完全替代 | DIP-8 |
EVERLIGHT 6N137 光电耦合器, 高速, DIP-8
|
||
6N137
|
Fairchild | 完全替代 | DIP-8 |
EVERLIGHT 6N137 光电耦合器, 高速, DIP-8
|
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