Technical parameters/rated voltage (DC): 10 V
Technical parameters/capacitors: 4.7 µF
Technical parameters/tolerances: ±20 %
Technical parameters/product series: 199D
Technical parameters/rated voltage: 10 VDC
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: Radial
Packaging parameters/pin spacing: 2.54 mm
External dimensions/height: 7.11 mm
External dimensions/diameter: Φ4.40mm
External dimensions/packaging: Radial
External dimensions/pin spacing: 2.54 mm
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Minimum Packaging: 1000
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
199D475X0010A2B1E3
|
Vishay Semiconductor | 完全替代 |
Cap Tant Solid 4.7uF 10V 20% (4.4 X 7.11mm) Radial 2.54mm 125℃ T/R
|
|||
199D475X0010A2V1E3
|
Vishay Sprague | 完全替代 |
Cap Tant Solid 4.7uF 10V 20% (4.4 X 7.11mm) Radial 2.54mm 125℃ Bulk
|
|||
199D475X0010A2V1E3
|
Vishay Semiconductor | 完全替代 |
Cap Tant Solid 4.7uF 10V 20% (4.4 X 7.11mm) Radial 2.54mm 125℃ Bulk
|
|||
199D475X9010A1V1E3
|
Vishay Semiconductor | 类似代替 | Radial |
Capacitor; Tantalum; Cap 4.7uF; Tol 10%; Vol-Rtg 10VDC; Radial; Case A
|
||
199D475X9010A1V1E3
|
VISHAY | 类似代替 | Radial |
Capacitor; Tantalum; Cap 4.7uF; Tol 10%; Vol-Rtg 10VDC; Radial; Case A
|
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