Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 12.5 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 6.8 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/input capacitance: 1.65 nF
Technical parameters/gate charge: 28.0 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 12.5 A
Technical parameters/rise time: 34 ns
Technical parameters/Input capacitance (Ciss): 1650pF @15V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 19 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.75 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6672A
|
Fairchild | 类似代替 | SOIC-8 |
30V N沟道PowerTrench MOSFET的 30V N-Channel PowerTrench MOSFET
|
||
|
|
Fairchild | 功能相似 | SOIC |
N沟道PowerTrench MOSFET的 N-Channel PowerTrench MOSFET
|
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