Technical parameters/dissipated power: 250 mW
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/Input capacitance (Ciss): 4pF @10V(Vds)
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BFR30LT1
|
Motorola | 功能相似 |
JFET放大器( N沟道) JFET Amplifiers(N-Channel)
|
|||
PMBFJ110,215
|
NXP | 类似代替 | SOT-23-3 |
NXP PMBFJ110,215 晶体管, JFET, JFET, -25 V, 10 mA, -500 mV, SOT-23
|
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