Technical parameters/number of pins: 6
Technical parameters/polarity: NPN, PNP
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 5V
Technical parameters/rated power (Max): 300 mW
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-363-6
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PUMD13
|
Philips | 功能相似 |
NXP PUMD13 双极晶体管阵列, NPN, PNP, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
|||
PUMD13,115
|
NXP | 功能相似 | SOT-363-6 |
Nexperia PUMD13,115 双 NPN + PNP 数字晶体管, 100 mA, Vce=50 V, 4.7 kΩ, 电阻比:0.1, 6引脚 UMT封装
|
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