Technical parameters/rated voltage (DC): 45.0 V
Technical parameters/rated current: 18.0 A
Technical parameters/capacitors: 4.50 nF
Technical parameters/output current: ≤18.0 A
Technical parameters/forward voltage: 600 mV
Technical parameters/polarity: Standard
Encapsulation parameters/installation method: Through Hole
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
18TQ040
|
Vishay Semiconductor | 功能相似 | TO-220-2 |
Schottky Rectifier
|
||
18TQ040
|
International Rectifier | 功能相似 |
Schottky Rectifier
|
|||
18TQ040
|
New Jersey Semiconductor | 功能相似 |
Schottky Rectifier
|
|||
|
|
Taiwan Semiconductor | 功能相似 | TO-220-2 |
MBR1050: 10 A 肖特基势垒整流器
|
||
|
|
Galaxy Semi-Conductor | 功能相似 | 2 |
MBR1050: 10 A 肖特基势垒整流器
|
||
|
|
EIC | 功能相似 |
MBR1050: 10 A 肖特基势垒整流器
|
|||
MBR1050
|
Diodes | 功能相似 | TO-220-2 |
MBR1050: 10 A 肖特基势垒整流器
|
||
MBR1050
|
Multicomp | 功能相似 | TO-220 |
MBR1050: 10 A 肖特基势垒整流器
|
||
|
|
Panjit | 功能相似 | TO-220 |
MBR1050: 10 A 肖特基势垒整流器
|
||
MBR1050
|
Rochester | 功能相似 | TO-220 |
MBR1050: 10 A 肖特基势垒整流器
|
||
|
|
DIYI Electronic | 功能相似 | TO-220 |
MBR1050: 10 A 肖特基势垒整流器
|
||
MBR1050
|
ON Semiconductor | 功能相似 | TO-220-2 |
MBR1050: 10 A 肖特基势垒整流器
|
||
MBR750
|
Taiwan Semiconductor | 功能相似 | TO-220 |
MBR750: 7.5A肖特基势垒整流器
|
||
|
|
EIC | 功能相似 |
MBR750: 7.5A肖特基势垒整流器
|
|||
|
|
VISHAY | 类似代替 | TO-220-2 |
VISHAY VS-18TQ045PBF 肖特基整流器, 单, 45 V, 18 A, TO-220AC, 2 引脚, 600 mV
|
||
VS-18TQ045PBF
|
Vishay Semiconductor | 类似代替 | TO-220-2 |
VISHAY VS-18TQ045PBF 肖特基整流器, 单, 45 V, 18 A, TO-220AC, 2 引脚, 600 mV
|
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