Technical parameters/rise/fall time: 15 ns
Technical parameters/number of output interfaces: 2
Technical parameters/output current: 1 A
Technical parameters/Static current: 200 µA
Technical parameters/rise time: 15 ns
Technical parameters/descent time: 15 ns
Technical parameters/descent time (Max): 15 ns
Technical parameters/rise time (Max): 15 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 8V ~ 14V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 4.9 mm
External dimensions/width: 3.9 mm
External dimensions/height: 1.45 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 125℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
LM5109BMA
|
National Semiconductor | 完全替代 | SOIC |
TEXAS INSTRUMENTS LM5109BMA 双路驱动器, MOSFET, 半桥, 8V-14V电源, 1A输出, 27ns延迟, SOIC-8
|
||
LM5109BMA/NOPB
|
National Semiconductor | 完全替代 | SOIC |
MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments ### MOSFET & IGBT 驱动器,Texas Instruments
|
||
LM5109BMA/NOPB
|
TI | 完全替代 | SOIC-8 |
MOSFET 和 IGBT 半桥栅极驱动器,Texas Instruments ### MOSFET & IGBT 驱动器,Texas Instruments
|
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