Technical parameters/frequency: 5000 MHz
Technical parameters/rated voltage (DC): 15.0 V
Technical parameters/rated current: 45.0 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 280 mW
Technical parameters/input capacitance: 0.64 pF
Technical parameters/breakdown voltage (collector emitter): 15 V
Technical parameters/gain: 10.5dB ~ 16dB
Technical parameters/minimum current amplification factor (hFE): 70 @15mA, 8V
Technical parameters/rated power (Max): 280 mW
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 280 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industry, Wireless Communications, For amplifier and oscillator applications in RF Front-end, Power Management, Automotive, Wireless, Industrial, Automotive, Power Management, Wireless
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ON5088,115
|
NXP | 功能相似 | SOT-343 |
Trans RF BJT NPN 3V 0.04A 136mW 4Pin(3+Tab) DFP T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review