Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 100 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 210 @2mA, 10V
Technical parameters/rated power (Max): 150 mW
Technical parameters/DC current gain (hFE): 90
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SC-70-3
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SC-70-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MSD1819A-RT1
|
ON Semiconductor | 类似代替 | SC-70-3 |
通用放大器晶体管 General Purpose Amplifier Transistor
|
||
MSD1819A-RT1
|
Motorola | 类似代替 |
通用放大器晶体管 General Purpose Amplifier Transistor
|
|||
SMSD1819A-RT1G
|
ON Semiconductor | 类似代替 | SC-70-3 |
双极晶体管 - 双极结型晶体管(BJT) SS GP XSTR NPN 50V
|
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