Technical parameters/Maximum reverse voltage (Vrrm): 1000V
Technical parameters/forward current: 1 A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: DIP-4
External dimensions/packaging: DIP-4
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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General Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR DF10M 二极管 桥式整流, 单相, 1 kV, 1.5 A, DIP, 1.1 V, 4 引脚
|
|||
DF10M
|
Fairchild | 功能相似 | DIP-4 |
FAIRCHILD SEMICONDUCTOR DF10M 二极管 桥式整流, 单相, 1 kV, 1.5 A, DIP, 1.1 V, 4 引脚
|
||
DF10M
|
ON Semiconductor | 功能相似 | PDIP-4 |
FAIRCHILD SEMICONDUCTOR DF10M 二极管 桥式整流, 单相, 1 kV, 1.5 A, DIP, 1.1 V, 4 引脚
|
||
DF10M
|
FUJI | 功能相似 |
FAIRCHILD SEMICONDUCTOR DF10M 二极管 桥式整流, 单相, 1 kV, 1.5 A, DIP, 1.1 V, 4 引脚
|
|||
DF10M
|
Taitron | 功能相似 |
FAIRCHILD SEMICONDUCTOR DF10M 二极管 桥式整流, 单相, 1 kV, 1.5 A, DIP, 1.1 V, 4 引脚
|
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