Technical parameters/power supply voltage (DC): 5.00 V, 5.50 V (max)
Technical parameters/working voltage: 5 V
Technical parameters/clock frequency: 70.0 GHz
Technical parameters/access time: 70 ns
Technical parameters/memory capacity: 16000000 B
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 4.5V ~ 5.5V
Technical parameters/power supply voltage (Max): 5.25 V
Technical parameters/power supply voltage (Min): 4.75 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 36
Encapsulation parameters/Encapsulation: EDIP-36
External dimensions/packaging: EDIP-36
Physical parameters/operating temperature: 0℃ ~ 70℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: PB free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1270W-100
|
Maxim Integrated | 类似代替 | EDIP-36 |
IC NVSRAM 16Mbit 100NS 36EDIP
|
||
DS1270Y-70
|
Maxim Integrated | 类似代替 | DIP-36 |
IC NVSRAM 16Mbit 70NS 36EDIP
|
||
DS1270Y-70IND#
|
Dallas Semiconductor | 类似代替 | DIP |
非易失性SRAM (NVSRAM), 16Mbit, 2M x 8bit, 70ns读/写, 并行, 4.5V至5.5V, EDIP-36
|
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