Technical parameters/power supply voltage (DC): 3.00V (min)
Technical parameters/power supply current: 225 mA
Technical parameters/number of circuits: 2
Technical parameters/number of channels: 2
Technical parameters/dissipated power: 5200 W
Technical parameters/power consumption: 743 W
Technical parameters/input capacitance: 2 pF
Technical parameters/input current (Min): 15 μA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 3V ~ 3.6V
Technical parameters/power supply voltage (Max): 3.6 V
Technical parameters/power supply voltage (Min): 3 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 48
Encapsulation parameters/Encapsulation: WFQFN-48
External dimensions/length: 7 mm
External dimensions/width: 7 mm
External dimensions/height: 0.8 mm
External dimensions/packaging: WFQFN-48
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: LVDS
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS15MB200TSQ
|
TI | 功能相似 | WFQFN-48 |
双1.5 Gbps的2 : 1/1 : 2 LVDS多路复用器/缓冲器,具有预加重 Dual 1.5 Gbps 2:1/1:2 LVDS Mux/Buffer with Pre-Emphasis
|
||
DS15MB200TSQ
|
National Semiconductor | 功能相似 | LLP EP |
双1.5 Gbps的2 : 1/1 : 2 LVDS多路复用器/缓冲器,具有预加重 Dual 1.5 Gbps 2:1/1:2 LVDS Mux/Buffer with Pre-Emphasis
|
||
DS15MB200TSQX
|
National Semiconductor | 功能相似 | HVQCCN |
双1.5 Gbps的2 : 1/1 : 2 LVDS多路复用器/缓冲器,具有预加重 Dual 1.5 Gbps 2:1/1:2 LVDS Mux/Buffer with Pre-Emphasis
|
||
DS15MB200TSQX
|
TI | 功能相似 | HVQCCN |
双1.5 Gbps的2 : 1/1 : 2 LVDS多路复用器/缓冲器,具有预加重 Dual 1.5 Gbps 2:1/1:2 LVDS Mux/Buffer with Pre-Emphasis
|
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