Technical parameters/frequency: 250 MHz
Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 200 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 0.625 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 1V
Technical parameters/rated power (Max): 625 mW
Technical parameters/DC current gain (hFE): 250
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-92-3
External dimensions/packaging: TO-92-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3906TFR
|
Fairchild | 类似代替 | TO-226-3 |
ON Semiconductor 2N3906TFR , PNP 晶体管, 200 mA, Vce=40 V, HFE:60, 250 MHz, 3引脚 TO-92封装
|
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