Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -100 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 80 @5mA, 10V
Technical parameters/Maximum current amplification factor (hFE): 80
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SC-75-3
External dimensions/length: 1.6 mm
External dimensions/width: 0.8 mm
External dimensions/height: 0.75 mm
External dimensions/packaging: SC-75-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTA123JETL
|
ROHM Semiconductor | 功能相似 | SOT-416-3 |
晶体管 双极预偏置/数字, 单路PNP, 50 V, -100 mA, 2.2 kohm, 47 kohm
|
||
DTA123JM3T5G
|
ON Semiconductor | 功能相似 | SOT-723-3 |
数字晶体管（ BRT ） PNP硅表面贴装晶体管与单片偏置电阻网络 Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
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