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Technical parameters/power supply voltage (DC): 3.00V (min)
Technical parameters/power supply current: 84.0 mA
Technical parameters/number of circuits: 1
Technical parameters/digits: 14
Technical parameters/dissipated power: 285 mW
Technical parameters/sampling rate: 65 Msps
Technical parameters/power consumption: 285 mW
Technical parameters/Analog to Digital Conversion (ADC): 1
Technical parameters/number of inputs: 1
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 400 mW
Technical parameters/number of input channels: 1
Technical parameters/power supply voltage (Max): 3.6 V
Technical parameters/power supply voltage (Min): 3 V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 32
Encapsulation parameters/Encapsulation: VQFN-32
External dimensions/packaging: VQFN-32
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: 3A991.c.3
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ADS6142IRHBR
|
TI | 完全替代 | VQFN-32 |
14位， 125/105/80/65 MSPS的DDR LVDS / CMOS输出的ADC 14-BITS, 125/105/80/65 MSPS ADC WITH DDR LVDS/CMOS OUTPUTS
|
||
ADS6142IRHBRG4
|
TI | 完全替代 | QFN-32 |
14位， 125/105/80/65 MSPS的DDR LVDS / CMOS输出的ADC 14-BITS, 125/105/80/65 MSPS ADC WITH DDR LVDS/CMOS OUTPUTS
|
||
ADS6142IRHBTG4
|
TI | 类似代替 | VQFN-32 |
14位， 125/105/80/65 MSPS的DDR LVDS / CMOS输出的ADC 14-BITS, 125/105/80/65 MSPS ADC WITH DDR LVDS/CMOS OUTPUTS
|
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