Technical parameters/power supply voltage (DC): 5.00 V, 5.50 V (max)
Technical parameters/number of pins: 28
Technical parameters/clock frequency: 150 GHz
Technical parameters/access time: 150 ns
Technical parameters/memory capacity: 32000 B
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/power supply voltage: 4.5V ~ 5.5V
Technical parameters/power supply voltage (Max): 5.5 V
Technical parameters/power supply voltage (Min): 4.5 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 28
Encapsulation parameters/Encapsulation: DIP-28
External dimensions/length: 39.37 mm
External dimensions/width: 18.8 mm
External dimensions/height: 9.35 mm
External dimensions/packaging: DIP-28
Physical parameters/operating temperature: 0℃ ~ 70℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Each
Other/Manufacturing Applications: Embedded Design & Development
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Maxim Integrated | 类似代替 | DIP-28 |
MAXIM INTEGRATED PRODUCTS DS1230AB-150+ 芯片, 存储器, NVRAM
|
||
DS1230Y-150
|
Dallas Semiconductor | 完全替代 | DIP |
IC NVSRAM 256Kbit 150NS 28DIP
|
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