Technical parameters/rated voltage (DC): 55.0 V
Technical parameters/rated current: 20.0 A
Technical parameters/dissipated power: 318 W
Technical parameters/breakdown voltage (collector emitter): 55 V
Technical parameters/gain: 14 dB
Technical parameters/minimum current amplification factor (hFE): 18 @1.4A, 6V
Technical parameters/rated power (Max): 318 W
Technical parameters/operating temperature (Max): 200 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 318000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: M-174
External dimensions/packaging: M-174
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 200℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
HF150-50F
|
Advanced Semiconductor | 功能相似 |
RF Power Bipolar Transistor, 1Element, High Frequency Band, Silicon, NPN, 0.5INCH, FM-4
|
|||
|
|
Microsemi | 功能相似 | M-174 |
RF Power Bipolar Transistor, 1Element, High Frequency Band, Silicon, NPN, 0.5INCH, PLASTIC, M174, 4Pin
|
||
|
|
Microchip | 功能相似 |
RF Power Bipolar Transistor, 1Element, High Frequency Band, Silicon, NPN, 0.5INCH, PLASTIC, M174, 4Pin
|
|||
|
|
ITT Corporation | 功能相似 |
RF Power Bipolar Transistor, 1Element, High Frequency Band, Silicon, NPN, 0.5INCH, PLASTIC, M174, 4Pin
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review