Technical parameters/power supply voltage (DC): 5.00 V, 5.50 V (max)
Technical parameters/clock frequency: 150 GHz
Technical parameters/access time: 150 ns
Technical parameters/memory capacity: 512000 B
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/power supply voltage (Min): 4.5 V
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: CDIP-28
External dimensions/packaging: CDIP-28
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
M27C512-15F1
|
ST Microelectronics | 功能相似 | CDIP-28 |
STMICROELECTRONICS M27C512-15F1 芯片, 存储器, EPROM, CMOS, 512K, DIP28
|
||
M27C512-15F6
|
ST Microelectronics | 功能相似 | CDIP-28 |
UV EPROM, STMicroelectronics ### UV（紫外线）EPROM 这些器件特有石英窗口，可通过将正确波长的紫外线 (UV) 强光照射到芯片上来擦除存储器内容。 然后，可使用适合的编程器对器件重新编程。 参见编程器和擦除器部分。
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