Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 200 mA
Technical parameters/capacitors: 2.00 µF
Technical parameters/forward voltage: 1.25V @150mA
Technical parameters/dissipated power: 250 mW
Technical parameters/reverse recovery time: 1500 ns
Technical parameters/Maximum forward surge current (Ifsm): 4.5 A
Technical parameters/forward voltage (Max): 1.25 V
Technical parameters/forward current (Max): 200 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/operating temperature: 150℃ (Max)
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAV170E6327HTSA1
|
Infineon | 类似代替 | SOT-23-3 |
Infineon 二极管 BAV170E6327HTSA1 低泄漏, Io=200mA, Vrev=85V, 1.5μs, 3引脚 SOT-23封装
|
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