Technical parameters/rise/fall time: 80ns, 40ns
Technical parameters/number of output interfaces: 1
Technical parameters/dissipated power: 1000 mW
Technical parameters/descent time (Max): 65 ns
Technical parameters/rise time (Max): 130 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 1000 mW
Technical parameters/power supply voltage: 9V ~ 20V
Technical parameters/power supply voltage (Max): 20 V
Technical parameters/power supply voltage (Min): 10 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PDIP-8
External dimensions/length: 10.92 mm
External dimensions/width: 7.11 mm
External dimensions/height: 5.33 mm
External dimensions/packaging: PDIP-8
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRS21271PBF
|
International Rectifier | 完全替代 | PDIP |
MOSFET 和 IGBT 栅极驱动器，单通道，Infineon ### MOSFET 和 IGBT 驱动器，Infineon (International Rectifier)
|
||
IRS21271SPBF
|
International Rectifier | 功能相似 | SOIC-8 |
MOSFET 和 IGBT 栅极驱动器，单通道，Infineon ### MOSFET 和 IGBT 驱动器，Infineon (International Rectifier)
|
||
IRS2127SPBF
|
International Rectifier | 功能相似 | SOIC-8 |
INFINEON IRS2127SPBF 电流传感器, 引导式操作, 60 µA, SOIC, 8 引脚, 10 V, 20 V
|
||
IRS2127SPBF
|
Infineon | 功能相似 | SOIC-8 |
INFINEON IRS2127SPBF 电流传感器, 引导式操作, 60 µA, SOIC, 8 引脚, 10 V, 20 V
|
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