Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/capacitors: 2.2 µF
Technical parameters/tolerances: ±10 %
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/rated voltage: 25 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: Radial
External dimensions/height: 7.11 mm
External dimensions/packaging: Radial
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Packaging Methods: Each
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
199D225X9016A1V1E3
|
VISHAY | 功能相似 | Radial |
CAP TANT 2.2uF 16V 10% RADIAL
|
||
199D225X9016A1V1E3
|
Vishay Sprague | 功能相似 |
CAP TANT 2.2uF 16V 10% RADIAL
|
|||
199D225X9025A1V1E3
|
Vishay Semiconductor | 功能相似 | Radial |
199D 系列 2.2 uF ±10 % 25 V 径向 固体 电解质钽电容
|
||
199D225X9025A1V1E3
|
Vishay Sprague | 功能相似 |
199D 系列 2.2 uF ±10 % 25 V 径向 固体 电解质钽电容
|
|||
199D225X9025A2A1E3
|
Vishay Sprague | 完全替代 |
Cap Tant Solid 2.2uF 25V 10% (4.4 X 7.11mm) Radial 2.54mm 125℃ Ammo Pack
|
|||
199D225X9025A2B1E3
|
Vishay Semiconductor | 完全替代 | Through Hole |
CAP TANT 2.2uF 25V 10% RADIAL
|
||
199D225X9025A2B1E3
|
Vishay Sprague | 完全替代 | Through Hole |
CAP TANT 2.2uF 25V 10% RADIAL
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review