Technical parameters/frequency: 120 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1.5 W
Technical parameters/breakdown voltage (collector emitter): 20 V
Technical parameters/maximum allowable collector current: 5A
Technical parameters/minimum current amplification factor (hFE): 120 @500mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 560 @500mA, 2V
Technical parameters/rated power (Max): 500 mW
Technical parameters/DC current gain (hFE): 280
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-89
External dimensions/length: 4.5 mm
External dimensions/width: 2.5 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOT-89
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SD1628G-TD-E
|
ON Semiconductor | 功能相似 | SOT-89 |
Small Signal Bipolar Transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review