Technical parameters/rated voltage (DC): -20.0 V
Technical parameters/rated current: -400 mA
Technical parameters/drain source resistance: 550 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 225 mW
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 400 mA
Technical parameters/rise time: 6 ns
Technical parameters/Input capacitance (Ciss): 70pF @5V(Vds)
Technical parameters/rated power (Max): 225 mW
Technical parameters/descent time: 6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 225mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.94 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NTR0202PLT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR NTR0202PLT1G 晶体管, MOSFET, P沟道, 400 mA, -20 V, 800 mohm, -10 V, -1.9 V
|
||
NTR0202PLT3G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
功率MOSFET -20 V， -400毫安， P沟道SOT- 23封装 Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review