Technical parameters/breakdown voltage: 111.7 V
Technical parameters/number of circuits: 1
Technical parameters/clamp voltage: 161.3 V
Technical parameters/test current: 5 mA
Technical parameters/peak pulse power: 15000 W
Technical parameters/minimum reverse breakdown voltage: 111.7 V
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/operating temperature: -55℃ ~ 175℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: P-600
External dimensions/length: 9.1 mm
External dimensions/packaging: P-600
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: General
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Panjit | 类似代替 |
硅雪崩二极管 - 15000瓦的轴向引线型瞬态电压抑制器 Silicon Avalanche Diodes - 15000 Watt Axial Leaded Transient Voltage Suppressor
|
|||
15KP100CA
|
EIC | 类似代替 | D-6 |
硅雪崩二极管 - 15000瓦的轴向引线型瞬态电压抑制器 Silicon Avalanche Diodes - 15000 Watt Axial Leaded Transient Voltage Suppressor
|
||
15KP100CA
|
Littelfuse | 类似代替 | P600, Axial |
硅雪崩二极管 - 15000瓦的轴向引线型瞬态电压抑制器 Silicon Avalanche Diodes - 15000 Watt Axial Leaded Transient Voltage Suppressor
|
||
15KP100CA
|
MDE Semiconductor | 类似代替 |
硅雪崩二极管 - 15000瓦的轴向引线型瞬态电压抑制器 Silicon Avalanche Diodes - 15000 Watt Axial Leaded Transient Voltage Suppressor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review