Technical parameters/rated voltage (DC): 1.00 kV
Technical parameters/rated current: 1.00 A
Technical parameters/capacitors: 15.0 pF
Technical parameters/output current: ≤1.00 A
Technical parameters/forward voltage: 1.1 V
Technical parameters/polarity: Standard
Technical parameters/thermal resistance: 25℃/W (RθJL)
Technical parameters/reverse recovery time: 2 µs
Technical parameters/forward current: 1 A
Technical parameters/forward voltage (Max): 1.1V @1A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: DO-41
External dimensions/length: 5.2 mm
External dimensions/width: 2.7 mm
External dimensions/height: 2.7 mm
External dimensions/packaging: DO-41
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: ECL99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N4007
|
DC Components | 类似代替 | Ammo Pack |
DIODE GEN PURP 1kV 1A DO41
|
||
|
|
YONGYUTAI | 类似代替 | SMAF |
DIODE GEN PURP 1kV 1A DO41
|
||
1N4007
|
DC Components | 类似代替 |
DIODE GEN PURP 1kV 1A DO41
|
|||
1N4007
|
Major Brands | 类似代替 | DO-41 |
DIODE GEN PURP 1kV 1A DO41
|
||
1N4007
|
GMR Semiconductor | 类似代替 |
DIODE GEN PURP 1kV 1A DO41
|
|||
1N4007
|
Fairchild | 类似代替 | DO-41 |
DIODE GEN PURP 1kV 1A DO41
|
||
1N4007
|
ST Microelectronics | 类似代替 | DO-41 |
DIODE GEN PURP 1kV 1A DO41
|
||
1N4007
|
NTE Electronics | 类似代替 | DO-41 |
DIODE GEN PURP 1kV 1A DO41
|
||
1N4007
|
Leshan Radio | 类似代替 | DO-41 |
DIODE GEN PURP 1kV 1A DO41
|
||
1N4007
|
Diodes | 类似代替 | DO-41 |
DIODE GEN PURP 1kV 1A DO41
|
||
1N4007
|
SHIKUES | 类似代替 | DO-214AC |
DIODE GEN PURP 1kV 1A DO41
|
||
1N4007
|
Toshiba | 类似代替 | DO-41 |
DIODE GEN PURP 1kV 1A DO41
|
||
1N4007
|
LiteOn | 类似代替 | DO-41 |
DIODE GEN PURP 1kV 1A DO41
|
||
1N4007
|
Taiwan Semiconductor | 类似代替 | DO-41 |
DIODE GEN PURP 1kV 1A DO41
|
||
1N4007
|
ChendaHang | 类似代替 | DO-41 |
DIODE GEN PURP 1kV 1A DO41
|
||
1N4007
|
Micro Commercial Components | 类似代替 | DO-41 |
DIODE GEN PURP 1kV 1A DO41
|
||
|
|
Galaxy Electrical | 类似代替 | DO-41 |
DO-41 1000V 1A 1.1V
|
||
|
|
Rectron Semiconductor | 类似代替 | DO-41 |
DO-41 1000V 1A 1.1V
|
||
|
|
LGE | 类似代替 | DO-41 |
DO-41 1000V 1A 1.1V
|
||
|
|
Central Semiconductor | 类似代替 |
DO-41 1000V 1A 1.1V
|
|||
1N4007G
|
Taiwan Semiconductor | 类似代替 | DO-41 |
DO-41 1000V 1A 1.1V
|
||
1N4007G
|
Leshan Radio | 类似代替 | DO-41 |
DO-41 1000V 1A 1.1V
|
||
1N4007G
|
Multicomp | 类似代替 | DO-41 |
DO-41 1000V 1A 1.1V
|
||
1N4007G
|
Won-Top Electronics | 类似代替 | DO-41 |
DO-41 1000V 1A 1.1V
|
||
1N4007G
|
Good-Ark Electronics | 类似代替 | DO-41 |
DO-41 1000V 1A 1.1V
|
||
1N4007G
|
迪一电子 | 类似代替 | DO-41 |
DO-41 1000V 1A 1.1V
|
||
1N4007RLG
|
ON Semiconductor | 功能相似 | DO-41 |
ON SEMICONDUCTOR 1N4007RLG 标准功率二极管, 单, 1 kV, 1 A, 450 mV, 30 A
|
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