Technical parameters/output current: 0.6 A
Technical parameters/load current: 600 mA
Technical parameters/dissipated power: 720 mW
Technical parameters/input voltage (Max): 1.65 V
Technical parameters/input voltage (Min): 1.1 V
Technical parameters/output voltage (Max): 60 V
Technical parameters/output current (Max): 0.6 A
Technical parameters/input current (Min): 20 mA
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 720 mW
Technical parameters/input voltage: 1.3 VDC
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: DIP-8
External dimensions/height: 3.5 mm
External dimensions/packaging: DIP-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ASSR-1420-302E
|
Broadcom | 完全替代 | DIP-8 |
MOSFET），ASSR 系列，Avago Technologies Avago Technologies 的光电 MOSFET 固态继电器系列包括红外线发光二极管 (LED) 和探测器，后者包括高速光伏二极管阵列和驱动器电路，用于打开/关闭两个分离式高电压 MOSFET。 ### 光耦合器，Avago Technologies
|
||
ASSR-1420-302E
|
AVAGO Technologies | 完全替代 | PDIP-8 |
MOSFET），ASSR 系列，Avago Technologies Avago Technologies 的光电 MOSFET 固态继电器系列包括红外线发光二极管 (LED) 和探测器，后者包括高速光伏二极管阵列和驱动器电路，用于打开/关闭两个分离式高电压 MOSFET。 ### 光耦合器，Avago Technologies
|
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