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Model IRG4PH50UDPBF
Description Co-Pack IGBT Beyond 21A, Infineon's isolated gate bipolar transistors (IGBTs) provide users with a complete range of options to ensure coverage of your applications. The high-efficiency rating makes this series of IGBTs suitable for various applications, and due to its low switching losses, it can support various switching frequencies. IGBT with combination package fast soft recovery parallel diode, used for bridge configuration # # IGBT transistors. International Rectifier provides a comprehensive IGBT (Insulated Gate Bipolar Transistor) product portfolio, ranging from 300V to 1200V, using various technologies to minimize switching and conduction losses, thereby improving efficiency, reducing thermal sensitivity issues, and improving power density. The company also offers a variety of IGBT compression molds specifically designed for medium to high power modules. For modules that require maximum reliability, a solderable front metal (SFM) die can be used to eliminate connecting wires, thereby achieving double-sided cooling, improving thermal performance, reliability, and efficiency.
Product QR code
Brand: Infineon
Packaging TO-247-3
Delivery time
Packaging method Bulk
Standard packaging quantity 1
82.33  yuan 82.33yuan
1+:
$ 94.6761
10+:
$ 90.5597
100+:
$ 89.8188
250+:
$ 89.2425
500+:
$ 88.3369
1000+:
$ 87.9252
2500+:
$ 87.3489
5000+:
$ 86.8550
Quantity
1+
10+
100+
250+
500+
Price
$94.6761
$90.5597
$89.8188
$89.2425
$88.3369
Price $ 94.6761 $ 90.5597 $ 89.8188 $ 89.2425 $ 88.3369
Start batch production 1+ 10+ 100+ 250+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9860) Minimum order quantity(1)
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Technical parameters/rated power: 200 W

Technical parameters/dissipated power: 200 W

Technical parameters/breakdown voltage (collector emitter): 1200 V

Technical parameters/reverse recovery time: 90 ns

Technical parameters/rated power (Max): 200 W

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 200000 mW

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-247-3

External dimensions/length: 15.9 mm

External dimensions/width: 5.3 mm

External dimensions/height: 20.3 mm

External dimensions/packaging: TO-247-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Not Recommended for New Designs

Other/Packaging Methods: Bulk

Other/Manufacturing Applications: Welding

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

Compliant with standard/REACH SVHC version: 2015/12/17

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRG4PC50UDPBF IRG4PC50UDPBF Infineon 类似代替 TO-247-3
INFINEON IRG4PC50UDPBF 单晶体管, IGBT, 55 A, 2 V, 200 W, 600 V, TO-247AC, 3 引脚
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IRG4PC50UDPBF IRG4PC50UDPBF IFA 类似代替
INFINEON IRG4PC50UDPBF 单晶体管, IGBT, 55 A, 2 V, 200 W, 600 V, TO-247AC, 3 引脚
IRG4PF50W IRG4PF50W Infineon 完全替代 TO-247
Trans IGBT Chip N-CH 900V 51A 3Pin(3+Tab) TO-247AC
IRG4PH50UPBF IRG4PH50UPBF International Rectifier 完全替代 TO-247-3
INFINEON IRG4PH50UPBF 单晶体管, IGBT, 45 A, 3.7 V, 200 W, 1.2 kV, TO-247AC, 3 引脚
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