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Model NTLJD2105LTBG
Description 4.3A,-8VPower MOSFET
Product QR code
Brand: ON Semiconductor
Packaging WDFN-6
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.46  yuan 1.46yuan
5+:
$ 1.9656
25+:
$ 1.8200
50+:
$ 1.7181
100+:
$ 1.6744
500+:
$ 1.6453
2500+:
$ 1.6089
5000+:
$ 1.5943
10000+:
$ 1.5725
Quantity
5+
25+
50+
100+
500+
Price
$1.9656
$1.8200
$1.7181
$1.6744
$1.6453
Price $ 1.9656 $ 1.8200 $ 1.7181 $ 1.6744 $ 1.6453
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3042) Minimum order quantity(5)
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Technical parameters/number of channels: 2

Technical parameters/drain source resistance: 33 mΩ

Technical parameters/polarity: N-Channel, P-Channel

Technical parameters/dissipated power: 520 mW

Technical parameters/drain source voltage (Vds): 8 V

Technical parameters/leakage source breakdown voltage: ±6 V

Technical parameters/Continuous drain current (Ids): 4.30 A

Technical parameters/rated power (Max): 520 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 55 ℃

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: WDFN-6

External dimensions/length: 2 mm

External dimensions/width: 2 mm

External dimensions/height: 0.75 mm

External dimensions/packaging: WDFN-6

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
NTJD1155LT1G NTJD1155LT1G ON Semiconductor 功能相似 SC-88-6
ON SEMICONDUCTOR NTJD1155LT1G 场效应管, MOSFET, P沟道, -8V, SC-88
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