Technical parameters/gain: 13 dB
Technical parameters/testing frequency: 0.1GHz ~ 40GHz
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: LGA-9
External dimensions/packaging: LGA-9
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: 3A001B2D
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
109T
|
Hammond Manufacturing | 功能相似 | DIP |
Wide Band Low Power Amplifier, 10MHz Min, 40000MHz Max, LGA-9
|
||
|
|
M/A-Com | 完全替代 | LGA-9 |
宽带放大器10兆赫 - 40 GHz的 Wideband Amplifier 10 MHz - 40 GHz
|
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