Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 4.70 A
Technical parameters/rated power: 25 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.54 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/leakage source breakdown voltage: 100 V
Technical parameters/Continuous drain current (Ids): 4.30 A
Technical parameters/rise time: 16 ns
Technical parameters/Input capacitance (Ciss): 180pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 9.4 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2.5W (Ta), 25W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 2.39 mm
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 2000
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR110PBF
|
VISHAY | 类似代替 | TO-252-3 |
功率MOSFET Power MOSFET
|
||
IRFR110PBF
|
International Rectifier | 类似代替 | TO-252 |
功率MOSFET Power MOSFET
|
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