Technical parameters/dissipated power: 2.8 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/rise time: 30 ns
Technical parameters/descent time: 50 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.56W (Ta), 2.8W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/packaging: SOT-363-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Rochester | 功能相似 | SC-70 |
FAIRCHILD SEMICONDUCTOR FDG327NZ 晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.068 ohm, 4.5 V, 700 mV
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SI1400DL-T1-E3
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VISHAY | 功能相似 | SC-70 |
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SI1426DH-T1-GE3
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VISHAY | 功能相似 | SC-70 |
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