Technical parameters/frequency: 40 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 130 W
Technical parameters/breakdown voltage (collector emitter): 160 V
Technical parameters/minimum current amplification factor (hFE): 50 @5A, 4V
Technical parameters/rated power (Max): 130 W
Technical parameters/DC current gain (hFE): 50
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/working junction temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 130000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-3-3
External dimensions/packaging: TO-3-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: Industrial, Industrial, Audio, Audio
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
SavantIC Semiconductor | 类似代替 |
TO-3P PNP 150V 14A
|
|||
2SA1303
|
Inchange Semiconductor | 类似代替 |
TO-3P PNP 150V 14A
|
|||
2SA1386
|
Sanken Electric | 类似代替 | TO-3-3 |
Bipolar (BJT) Single Transistor, PNP, -160V, 40MHz, 130W, -15A, 50
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review