Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 1.17 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 340 mW
Technical parameters/threshold voltage: 1.3 V
Technical parameters/drain source voltage (Vds): 50 V
Technical parameters/rise time: 1.9 ns
Technical parameters/Input capacitance (Ciss): 38pF @25V(Vds)
Technical parameters/rated power (Max): 340 mW
Technical parameters/descent time: 6.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 340mW (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 0.9 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSS138W
|
Diodes | 功能相似 | SOT-323 |
FAIRCHILD SEMICONDUCTOR BSS138W 晶体管, MOSFET, N沟道, 210 mA, 50 V, 1.17 ohm, 10 V, 1.3 V
|
||
BSS138W
|
Fairchild | 功能相似 | SOT-323-3 |
FAIRCHILD SEMICONDUCTOR BSS138W 晶体管, MOSFET, N沟道, 210 mA, 50 V, 1.17 ohm, 10 V, 1.3 V
|
||
BSS138W
|
ON Semiconductor | 功能相似 | SOT-323 |
FAIRCHILD SEMICONDUCTOR BSS138W 晶体管, MOSFET, N沟道, 210 mA, 50 V, 1.17 ohm, 10 V, 1.3 V
|
||
BSS138W-7-F
|
Diodes | 功能相似 | SOT-323-3 |
BSS138W-7-F 编带
|
||
BSS138W-7-F
|
Diodes Zetex | 功能相似 | SOT-323 |
BSS138W-7-F 编带
|
||
BSS138W-7-F
|
Multicomp | 功能相似 | SOT-323 |
BSS138W-7-F 编带
|
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