Technical parameters/power supply voltage (DC): 2.30V (min)
Technical parameters/working voltage: 2.3V ~ 5.5V
Technical parameters/output current: ≤30 mA
Technical parameters/power supply current: 19 µA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/common mode rejection ratio: 80 dB
Technical parameters/Static current: 25 µA
Technical parameters/Input compensation drift: 2.00 µV/K
Technical parameters/bandwidth: 190 kHz
Technical parameters/conversion rate: 80.0 mV/μs
Technical parameters/gain bandwidth product: 190 kHz
Technical parameters/input compensation voltage: 150 µV
Technical parameters/input bias current: 15 nA
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/gain bandwidth: 0.19 MHz
Technical parameters/Common Mode Rejection Ratio (Min): 80 dB
Technical parameters/power supply voltage: 2.3V ~ 5.5V
Technical parameters/power supply voltage (Max): 5.5V ~ 6V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: PDIP-8
External dimensions/length: 9.27 mm
External dimensions/width: 6.35 mm
External dimensions/height: 3.3 mm
External dimensions/packaging: PDIP-8
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MCP616T-I/SN
|
Microchip | 完全替代 | SOIC-8 |
2.3V至5.5V微功耗双CMOS运算放大器 2.3V to 5.5V Micropower Bi-CMOS Op Amps
|
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