Technical parameters/dissipated power: 20 W
Technical parameters/drain source voltage (Vds): 32 V
Technical parameters/operating temperature (Max): 225 ℃
Encapsulation parameters/installation method: Screw
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOT-608
External dimensions/packaging: SOT-608
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLS6G3135-120,112
|
Ampleon USA | 功能相似 | SOT-502 |
NXP BLS6G3135-120,112 RF FET Transistor, 32V, 7.2A, 120W, 3.1GHz, 3.5GHz, SOT-502B
|
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