Technical parameters/power supply current: 2.5 mA
Technical parameters/number of circuits: 1
Technical parameters/number of channels: 1
Technical parameters/dissipated power: 0.75 W
Technical parameters/common mode rejection ratio: 94 dB
Technical parameters/Input compensation drift: 1.00 µV/K
Technical parameters/bandwidth: 1.5 MHz
Technical parameters/conversion rate: 1.60 V/μs
Technical parameters/gain bandwidth product: 1.5 MHz
Technical parameters/input compensation voltage: 150 µV
Technical parameters/input bias current: 0.5 pA
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/gain bandwidth: 1.5 MHz
Technical parameters/dissipated power (Max): 750 mW
Technical parameters/Common Mode Rejection Ratio (Min): 94 dB
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -25℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/06/15
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Micross | 类似代替 |
JFET 输入运算放大器,OPA Difet 系列 Texas Instruments 一系列高性能 Burr-Brown FET 输入运算放大器 这些设备具有一个利用电介隔离 FET (Difet®) 的输入级,可通过消除隔离接线泄漏显著降低输入偏置电流。 它们提供一个高速和高精密度的特殊组合,搭配超低输入电流。 典型的应用包括高精度仪器仪表、静电计和照片探测放大器、医疗设备和高精确度数据采集。 ### 运算放大器,Texas Instruments
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TL032CD
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TI | 类似代替 | SOIC-8 |
TEXAS INSTRUMENTS TL032CD 运算放大器, 双路, 1.1 MHz, 2个放大器, 5.1 V/µs, ± 5V 至 ± 15V, SOIC, 8 引脚
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