Technical parameters/power supply voltage (DC): 3.30 V, 3.60 V (max)
Technical parameters/clock frequency: 100 GHz
Technical parameters/access time: 100 ns
Technical parameters/memory capacity: 1000000 B
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/power supply voltage: 3V ~ 3.6V
Technical parameters/power supply voltage (Max): 3.6 V
Technical parameters/power supply voltage (Min): 3 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: PowerCap-34
External dimensions/width: 25.02 mm
External dimensions/packaging: PowerCap-34
Physical parameters/operating temperature: -40℃ ~ 85℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: 3A991.b.2.a
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1345WP-100
|
Maxim Integrated | 功能相似 | PowerCap Module-34 |
NVRAM 3.3V 1024K NV SRAM w/Battery Monitor
|
||
DS1345WP-100
|
Dallas Semiconductor | 功能相似 |
NVRAM 3.3V 1024K NV SRAM w/Battery Monitor
|
|||
DS1345WP-100+
|
Dallas Semiconductor | 完全替代 |
3.3V 1024K Nonvolatile SRAM with Battery Monitor
|
|||
DS1345WP-100IND
|
Maxim Integrated | 完全替代 | PowerCap-34 |
3.3V 1024K Nonvolatile SRAM with Battery Monitor
|
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