Technical parameters/power supply voltage (DC): 20.0V (max)
Technical parameters/rise/fall time: 150ns, 50ns
Technical parameters/number of output interfaces: 2
Technical parameters/output voltage: ≤20.0 V
Technical parameters/product series: IR2108
Technical parameters/descent time (Max): 80 ns
Technical parameters/rise time (Max): 220 ns
Technical parameters/power supply voltage: 10V ~ 20V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IR2108SPBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IR2108SPBF 芯片, 场效应管, MOSFET/晶体管, 低/高压侧, NSOIC-16 新
|
||
IR2108SPBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IR2108SPBF 芯片, 场效应管, MOSFET/晶体管, 低/高压侧, NSOIC-16 新
|
||
IR2108STRPBF
|
International Rectifier | 类似代替 | SOIC-8 |
P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
|
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