Technical parameters/rated voltage (DC): 50.0 V
Technical parameters/rated current: 500 mA
Technical parameters/number of output interfaces: 7
Technical parameters/polarity: NPN
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical Parameters/Drivers/Packages: 7
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/output current (Max): 500 mA
Technical parameters/DC current gain (hFE): 1000
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 16
Encapsulation parameters/Encapsulation: DIP-16
External dimensions/packaging: DIP-16
Physical parameters/operating temperature: -40℃ ~ 85℃ (TA)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
E-ULN2004A
|
ST Microelectronics | 完全替代 | DIP-16 |
PDIP NPN 50V 0.5A
|
||
|
|
HTC | 类似代替 | DIP-16 |
TEXAS INSTRUMENTS ULN2003AN 双极晶体管阵列, 达林顿晶体管, NPN, 50 V, 500 mA, DIP
|
||
ULN2003AN
|
National Semiconductor | 类似代替 | PDIP |
TEXAS INSTRUMENTS ULN2003AN 双极晶体管阵列, 达林顿晶体管, NPN, 50 V, 500 mA, DIP
|
||
ULN2003AN
|
Toshiba | 类似代替 | TT |
TEXAS INSTRUMENTS ULN2003AN 双极晶体管阵列, 达林顿晶体管, NPN, 50 V, 500 mA, DIP
|
||
ULQ2003AN
|
TI | 完全替代 | PDIP-16 |
TEXAS INSTRUMENTS ULQ2003AN 双极晶体管阵列, NPN, 50 V, 500 mA, 1000 hFE, DIP
|
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