Technical parameters/rated voltage (DC): -250 V
Technical parameters/rated current: -8.00 A
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 250 V
Technical parameters/maximum allowable collector current: 8A
Technical parameters/minimum current amplification factor (hFE): 10 @2A, 5V
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 2000 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Other/Minimum Packaging: 50
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Inchange Semiconductor | 功能相似 |
50W General Purpose PNP Plastic Leaded Transistor. 250V Vceo, 8A Ic, 50 - hFE
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Continental Device | 功能相似 |
50W General Purpose PNP Plastic Leaded Transistor. 250V Vceo, 8A Ic, 50 - hFE
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MJE15033
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ON Semiconductor | 功能相似 | TO-220-3 |
50W General Purpose PNP Plastic Leaded Transistor. 250V Vceo, 8A Ic, 50 - hFE
|
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MJE15033G
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ON Semiconductor | 类似代替 | TO-220-3 |
PNP 功率晶体管，ON Semiconductor ### 标准 带 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。 ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
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