Technical parameters/number of pins: 3
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 600 mW
Technical parameters/breakdown voltage (collector emitter): 12 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 300 @10mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 700
Technical parameters/rated power (Max): 600 mW
Technical parameters/DC current gain (hFE): 300
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 600 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SMD-3
External dimensions/length: 2 mm
External dimensions/width: 1.6 mm
External dimensions/height: 0.85 mm
External dimensions/packaging: SMD-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Low-frequency Amplifi er, high-speed switching, small motor drive, muting circuit
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
12A02MH-TL-E
|
ON Semiconductor | 功能相似 | SMD-3 |
Low-Frequency General-Purpose Amplifi er Applications
|
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