Technical parameters/rated voltage (DC): -250 V
Technical parameters/rated current: -16.0 A
Technical parameters/polarity: Dual P-Channel
Technical parameters/dissipated power: 250 W
Technical parameters/breakdown voltage (collector emitter): -250 V
Technical parameters/maximum allowable collector current: 16A
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-3
External dimensions/packaging: TO-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD246C
|
Bourns J.W. Miller | 功能相似 |
PNP硅功率晶体管 PNP SILICON POWER TRANSISTORS
|
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