Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 3.00 A
Technical parameters/number of channels: 1
Technical parameters/number of pins: 6
Technical parameters/drain source resistance: 0.056 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.6 W
Technical parameters/threshold voltage: 2.4 V
Technical parameters/input capacitance: 634 pF
Technical parameters/gate charge: 13.0 nC
Technical parameters/drain source voltage (Vds): 80 V
Technical parameters/leakage source breakdown voltage: 80 V
Technical parameters/breakdown voltage of gate source: ±20.0 V
Technical parameters/Continuous drain current (Ids): 3.00 A
Technical parameters/rise time: 3 ns
Technical parameters/Input capacitance (Ciss): 634pF @40V(Vds)
Technical parameters/rated power (Max): 800 mW
Technical parameters/descent time: 3 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.6W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSOT-23-6
External dimensions/length: 3 mm
External dimensions/width: 1.7 mm
External dimensions/height: 1 mm
External dimensions/packaging: TSOT-23-6
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDC3512_F095
|
ON Semiconductor | 类似代替 | TSOT-23-6 |
MOSFET N-CH 80V 3A 6-SSOT
|
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