Technical parameters/rated voltage (DC): 1.60 kV
Technical parameters/rated current: 35.0 A
Technical parameters/output current: ≤35.0 A
Technical parameters/forward voltage: 1.19 V
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: dDIP-5
External dimensions/packaging: dDIP-5
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Semiconductor | 功能相似 | D-63 |
Bridge Rectifier Diode, 3 Phase, 35A, 1600V V(RRM), Silicon, ROHS COMPLIANT, D-63, 5Pin
|
||
36MT160
|
Vishay Precision Group | 功能相似 | D-63 |
Bridge Rectifier Diode, 3 Phase, 35A, 1600V V(RRM), Silicon, ROHS COMPLIANT, D-63, 5Pin
|
||
36MT160
|
Vishay Intertechnology | 功能相似 |
Bridge Rectifier Diode, 3 Phase, 35A, 1600V V(RRM), Silicon, ROHS COMPLIANT, D-63, 5Pin
|
|||
36MT160
|
International Rectifier | 功能相似 | dDIP-5 |
Bridge Rectifier Diode, 3 Phase, 35A, 1600V V(RRM), Silicon, ROHS COMPLIANT, D-63, 5Pin
|
||
|
|
Littelfuse | 功能相似 | FO-B-B |
IXYS SEMICONDUCTOR VUO36-16NO8 二极管 桥式整流, 三相, 1.6 kV, 35 A, 模块, 1.7 V, 5 引脚
|
||
VUO36-16NO8
|
IXYS Semiconductor | 功能相似 | FO-B-5 |
IXYS SEMICONDUCTOR VUO36-16NO8 二极管 桥式整流, 三相, 1.6 kV, 35 A, 模块, 1.7 V, 5 引脚
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review