Technical parameters/drain source resistance: 2.4 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/drain source voltage (Vds): 20.0 V
Technical parameters/Continuous drain current (Ids): 40.0 A
Technical parameters/Input capacitance (Ciss): 5415pF @10V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 5400 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Other/Packaging Methods: Tape & Reel (TR)
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI7866ADP-T1-E3
|
Vishay Semiconductor | 类似代替 | SOIC-8 |
MOSFET N-CH 20V 40A PPAK SO-8
|
||
SIR410DP-T1-GE3
|
Vishay Semiconductor | 类似代替 | SO-8 |
MOSFET N-CH 20V 35A PPAK SO-8
|
||
SIR496DP-T1-GE3
|
VISHAY | 类似代替 | SO-8 |
MOSFET N-CH 20V 35A PPAK SO-8
|
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