Technical parameters/number of pins: 3
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 1 W
Technical parameters/breakdown voltage (collector emitter): 40.0 V
Technical parameters/DC current gain (hFE): 40
Technical parameters/operating temperature (Max): 200 ℃
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-39
External dimensions/packaging: TO-39
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Fairchild | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5,
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2N4234
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2N4234
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Microsemi | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5,
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2N4234
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Micro Electronics | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5,
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2N4234
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2N4234
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Multicomp | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5,
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2N4234
|
API Technologies | 功能相似 |
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5,
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