Technical parameters/frequency: 150 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 0.5 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 140 @100mA, 2V
Technical parameters/Maximum current amplification factor (hFE): 280
Technical parameters/rated power (Max): 500 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SC-62-3
External dimensions/length: 4.5 mm
External dimensions/width: 2.5 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SC-62-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Voltage regulators, relay drivers, lamp drivers, electrical equipment
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SB1124S-TD-H
|
ON Semiconductor | 类似代替 | SOT-89-3 |
双极晶体管-50V ， -3A ，低VCEsat晶体管， PNP ， NPN单PCP Bipolar Transistor -50V, -3A, Low VCEsat, PNP,NPN Single PCP
|
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