Technical parameters/rated voltage (DC): -50.0 V
Technical parameters/rated current: -30.0 mA
Technical parameters/rated power: 0.2 W
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 0.2 W
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 56 @5mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 56
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-323-3
External dimensions/length: 2 mm
External dimensions/width: 1.25 mm
External dimensions/height: 0.8 mm
External dimensions/packaging: SOT-323-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DTA124EKAT146
|
ROHM Semiconductor | 类似代替 | SOT-23-3 |
ROHM DTA124EKAT146 单晶体管 双极, 数字式, PNP, 50 V, 250 MHz, 200 mW, 100 mA, 56 hFE
|
||
DTA124EMT2L
|
ROHM Semiconductor | 类似代替 | VMT-3 |
双极晶体管 - 预偏置 PNP 50V 30MA
|
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