Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 8.00 A
Technical parameters/rated power: 1.75 W
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1.75 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 8A
Technical parameters/minimum current amplification factor (hFE): 1000 @4A, 4V
Technical parameters/rated power (Max): 1.75 W
Technical parameters/DC current gain (hFE): 1000
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1750 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-251-3
External dimensions/length: 6.6 mm
External dimensions/width: 2.3 mm
External dimensions/height: 6.1 mm
External dimensions/packaging: TO-251-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Fairchild | 功能相似 |
D- PAK表面贴装应用 D-PAK for Surface Mount Applications
|
|||
KSH122ITU
|
Fairchild | 类似代替 | TO-251-3 |
Trans Darlington NPN 100V 8A 1750mW 3Pin(3+Tab) IPAK Tube
|
||
|
|
ON Semiconductor | 功能相似 | CASE 369-07 |
互补功率达林顿晶体管 COMPLEMENTARY POWER DARLINGTON TRANSISTORS
|
||
MJD122-1
|
ST Microelectronics | 功能相似 | TO-251-3 |
互补功率达林顿晶体管 COMPLEMENTARY POWER DARLINGTON TRANSISTORS
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review